Sth180n10f3-6
WebSTH180N10F3-6 MOSFET. Datasheet pdf. Equivalent Type Designator: STH180N10F3-6 Marking Code: 180N10F3 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 315 W Maximum Drain-Source Voltage Vds : 100 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V STH180N10F3-6 Obsolete N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 packaage Download datasheet Overview Sample & Buy Solutions Documentation CAD Resources Tools & Software Quality & Reliability Partner products Sales Briefcase Product overview Description
Sth180n10f3-6
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WebThis device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching … WebSTH180N10F3-6 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 100V ; Current - Continuous Drain (Id) @ 25° C: 120A ; Rds On (Max) @ Id, Vgs: 4.5 mOhm Features. Applications. Description. This device is an N-channel enhancement mode Power MOSFETs produced using …
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WebSTH180N10F3-6 100 V P 180 A x Low on-resistence RDS(on) x 100% avalanche tested Applications x Switching applications Description This device is an N-channel Power MOSFET GHYHORSHGXVLQJ67ULS)(7 ) WHFKQRORJ\ ,WLV designed to minimize on-resistance and gate charge to provide superior switching ... WebApr 9, 2024 · STH180N10F3-2 Mfr.: STMicroelectronics Customer #: Description: MOSFET N-Ch 100V 3.9 mOhm 180A STripFET Complete Your Design Datasheet: STH180N10F3-2 …
WebThis device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Key Features Ultra low on-resistence 100% avalanche tested Technical Attributes Find Similar Parts ECCN / UNSPSC / COO
WebSTMicroelectronics STH180N10F3-6 MOSFETs Trans MOSFET N-CH 100V 180A 7-Pin (6+Tab) H2PAK T/R Download Datasheet Symbols and Footprints See all MOSFETs by … trend micro exploit kitWeb80N10, manufactured by IXYS Corporation and distributed by Worldway Electronics. It's category belong to Electronic Components ICs. It is applied to many fields, like Communications equipment Datacom module Industrial Pro audio, video & signage Enterprise systems Enterprise projectors . templerschwert originalWebSTH180N10F3-2 STMicroelectronics MOSFET N-Ch 100V 3.9 mOhm 180A STripFET datasheet, inventory & pricing. trendmicro event id: 5102WebSTH180N10F3-6: Each: 0: 27 Weeks, 1 Days: 1: £1.69 £1.46 £1.46 £1.46 £1.46 Buy Now ... templer \\u0026 hirschWebElectrical characteristics STH180N10F3-2 6/16 DocID019060 Rev 2 2.1 Electrical characteristics (curves) -1 Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V (BR)DSS vs temperature Figure 7: Static drain-source on-resistance ID 100 10 1 0.1 1 10 VDS(V) templers mill motel orangeWebSTH180N10F3-6 Electrical ratings Doc ID 022347 Rev 2 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package. Drain current (continuous) at TC = 25°C 180 A ID trend micro extension edge installWebSTH180N10F3-6 datasheet PDF download, STMicroelectronics Transistors - FETs, MOSFETs - Single STH180N10F3-6 Specifications: MOSFET N-CH 100V 180A H2PAK. trend micro extension edge